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Dark current reduction in fused InGaAs/Si avalanche photodiode
- Source :
- LEOS 2001. 14th Annual Meeting of the IEEE Lasers and Electro-Optics Society (Cat. No.01CH37242).
- Publication Year :
- 2002
- Publisher :
- IEEE, 2002.
-
Abstract
- Mesa type fused InGaAs/Si separated absorption and multiplication APDs with a diameter of 130 /spl mu/m have been fabricated on n-type Si substrate. Substantial dark current reduction has been achieved compared with the published data for fused InGaAs/Si APDs. Dark current densities as low as 0.23 mA/cm/sup 2/ at -5 V and 3 mA/cm/sup 2/ at a gain of 10 are reported. Our improved dark current even though is still 2 orders larger than the conventional mesa-structure InGaAs/InP APD lower excess noise level is expected due to the larger difference between the electron and hole ionization coefficients of Si.
Details
- Database :
- OpenAIRE
- Journal :
- LEOS 2001. 14th Annual Meeting of the IEEE Lasers and Electro-Optics Society (Cat. No.01CH37242)
- Accession number :
- edsair.doi...........b2910acd4a69013495a3bb27a44d0726
- Full Text :
- https://doi.org/10.1109/leos.2001.969043