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Observation of Ga segregation in the growth of InAs overlayers on GaAs(110) using core-level photoelectron spectroscopy
- Source :
- Physical Review B. 55:9716-9721
- Publication Year :
- 1997
- Publisher :
- American Physical Society (APS), 1997.
- Subjects :
- Materials science
X-ray photoelectron spectroscopy
Core level
Molecular physics
Subjects
Details
- ISSN :
- 10953795 and 01631829
- Volume :
- 55
- Database :
- OpenAIRE
- Journal :
- Physical Review B
- Accession number :
- edsair.doi...........b268b14a33b50d8b5f8f6cd267910c95
- Full Text :
- https://doi.org/10.1103/physrevb.55.9716