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Ferroelectric-gated ReS2 field-effect transistors for nonvolatile memory
- Source :
- Nano Research. 15:5443-5449
- Publication Year :
- 2022
- Publisher :
- Springer Science and Business Media LLC, 2022.
Details
- ISSN :
- 19980000 and 19980124
- Volume :
- 15
- Database :
- OpenAIRE
- Journal :
- Nano Research
- Accession number :
- edsair.doi...........b20fb3568b28537ea4f2d4acd187d86a
- Full Text :
- https://doi.org/10.1007/s12274-022-4142-8