P-6: Impact of Buffer Layers on the Self-Aligned Top-Gate a-IGZO TFT Characteristics

Authors :: Marc Ameys
Paul Heremans
Brian Hardy Cobb
Ajay Bhoolokam
Manoj Nag
Soeren Steudel
Sarah Schols
Gerwin Gelinck
Abhishek Kumar
Robert Muller
Kris Myny
Steve Smout
Guido Groeseneken
Mitsuhiro Murata
Source :: SID Symposium Digest of Technical Papers. 46:1139-1142
Publication Year :: 2015
Publisher :: Wiley, 2015.
Abstract: In this work we present the impact of buffer layers deposited by various techniques such as plasma enhanced chemical deposition (PECVD), physical vapor deposition (PVD) and atomic layer deposition (ALD) techniques on self-aligned (SA) top gate amorphous-Indium-Gallium-Zinc-Oxide (a-IGZO) TFT characteristics. Finally an optimized layer was integrated in TFT backplane on polyimide (PI) foil and a QQVGA AMOLED display is demonstrated.

Subjects :: Atomic layer deposition
AMOLED
Materials science
Thin-film transistor
Flexible display
business.industry
Plasma-enhanced chemical vapor deposition
Physical vapor deposition
Optoelectronics
Nanotechnology
business
Layer (electronics)
Polyimide

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