Undoped and Phosphorus Doped a-Sic:H Films: Investigation of Electrical Properties and Hall Effect

We have deposited by Plasma Enhanced Chemical Vapour Deposition (PECVD), under particular conditions of high H2 dilution and high power density, undoped and phosphorus doped (µc‐SiC:H films. We have obtained n‐doped films with a high band‐gap (E04 up to 2.1 eV) and a high dark conductivity (σ4 up to 10 S cm‐1) which are promising materials for window layers in solar cells. Thermo Electric Power (TEP) measurements allowed to identify the type of majority carriers. The dark conductivity and the Hall mobility have been obtained as a function of temperature in the range 80‐480 K.