Performance of a large-area avalanche photodiode at low temperature for scintillation detection

We investigate the performance of a large-area ð13 mm � 13 mmÞ avalanche photodiode at temperatures ranging from 4.2 to 77 K: We find that the gain, at a given bias voltage, increases with decreasing temperature down to 40 K; below which a premature breakdown phenomenon occurs. The quantum efficiency of the device decreases with decreasingtemperature until approximately 40 K ; at which point it drops abruptly to o15% of its room temperature value. The sensitivity of the device above 40 K makes it a good candidate for detection of scintillation light in lowtemperature systems. r 2003 Elsevier B.V. All rights reserved. PACS: 07.60.Dq; 29.40.Mc; 29.40.Wk