Computational analysis of cesium based inorganic perovskite solar cells using SCAPS-1D

The numerical simulation of inorganic halide based perovskite solar cell has been performed. This paper demonstrates the use of CsPbI2Br as a perovskite layer in the device simulation based on SCAPS 1D for the first time. The magnesium doped zinc oxide (ZnMgO) as an electron transport layer (ETL) of varying band gap has been used and correspondingly the photovoltaic performance has been measured. The values of the band gap of ZnMgO layer has been directly taken from the literature where the variation in band gap has been performed by changing the magnesium concentration in the ETL layer. It has been elucidated from the simulation results that with the increase in band gap of ZnMgO layer, the photovoltaic performance decreases. This is mainly because the ZnMgO layer with wider band gap has higher carrier recombination. Moreover, the increase in recombination also degrades the other parameters such as VOC, JSC, and FF of the simulated device.