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Optical characterization of compound semiconductor alloys
- Source :
- Journal of Crystal Growth. 27:166-176
- Publication Year :
- 1974
- Publisher :
- Elsevier BV, 1974.
-
Abstract
- A review is presented of the optical measurement techniques as they have been applied to the characterization of III–V compounds and alloys. The methods discussed and the more detailed examples cited are: absorption (AIP, Ga1−xAlxP), reflectance, cathodoluminescence (Ga1−xAlxAs), photoluminescence (GaAs1−yPy), electroluminescence (time-decay of Ga1−xAlxAs EL), and automated photoluminescence materials screening (GaAs1−yPy).
- Subjects :
- Photoluminescence
Materials science
business.industry
Analytical chemistry
Cathodoluminescence
Electroluminescence
Condensed Matter Physics
Reflectivity
Characterization (materials science)
Inorganic Chemistry
Materials Chemistry
Optoelectronics
Compound semiconductor
Absorption (electromagnetic radiation)
business
Subjects
Details
- ISSN :
- 00220248
- Volume :
- 27
- Database :
- OpenAIRE
- Journal :
- Journal of Crystal Growth
- Accession number :
- edsair.doi...........b12c00e62656aa31ce677c9ac4109a85