Neuronal Firing Characteristics in the NbO2 based Mott Memristor

High-performance artificial neurons are critical to build bio-plausible artificial neural networks for neuromorphic computing. In this work, we report the fabrication and comprehensive characterizations of NbO 2 based Mott neuron. The device shows uniform neuronal firing behavior with a small cycle-to-cycle variation of 2.6% in the threshold voltage. Besides, a memory effect with subthreshold firing is observed in the NbO 2 Mott neuron, which is associated with the relaxation dynamics in the insulator-metal transition (IMT). Based on the Mott transition theory, this behavior can be attributed to the long-lived metallic grains in the NbO 2 layer. Such dynamic firing properties in the resistive switching process could have potential applications in neuromorphic circuits.