Liquid phase epitaxial growth of Gal-xInxSb on GaSb by stepwise grading

Authors :: A.M. Andrews
D. T. Cheung
E. R. Gertner
W. E. Tennant
J. R. Rode
Source :: Journal of Electronic Materials. 7:337-345
Publication Year :: 1978
Publisher :: Springer Science and Business Media LLC, 1978.
Abstract: The Gal-xInxSb alloy system is a potentially important material for the fabrication of middle wavelength infrared detectors and emitters. In order to develop the use of this material we have investigated the liquid phase epitaxial growth of Ga1−xInxSb on GaSb via stepwise grading in the range of 400–600°C using a horizontal slider boat in a transparent furnace. Single crystal layers of Ga1−xInxSb have been obtained for the composition range 0