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First Demonstration of heterogenous Complementary FETs utilizing Low-Temperature (200 °C) Hetero-Layers Bonding Technique (LT-HBT)
First Demonstration of heterogenous Complementary FETs utilizing Low-Temperature (200 °C) Hetero-Layers Bonding Technique (LT-HBT)
- Source :
- 2020 IEEE International Electron Devices Meeting (IEDM).
- Publication Year :
- 2020
- Publisher :
- IEEE, 2020.
-
Abstract
- For the first time, we demonstrate heterogeneous complementary FETs (hCFETs) with Ge and Si channels fabricated with a layer transfer technique. The 3D channel stacking integration particularly employs a low-temperature (200 °C) hetero-layers bonding technique (LT-HBT) realized by a surface activating chemical treatment at room temperature, enabling Ge channels bonded onto Si wafers. Furthermore, to obtain symmetric performance in n/p FETs, a multi-channel structure of two-channel Si and one-channel Ge is also implemented. Wafer-scale LT-HBT is demonstrated successfully, showing new opportunities for the ultimate device footprint scaling with heterogeneous integration.
Details
- Database :
- OpenAIRE
- Journal :
- 2020 IEEE International Electron Devices Meeting (IEDM)
- Accession number :
- edsair.doi...........b0b85a6f84bd690a0af5c9400f93a632
- Full Text :
- https://doi.org/10.1109/iedm13553.2020.9372001