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Zn doped GaN for single‐photon emission
- Source :
- physica status solidi c. 9:1024-1027
- Publication Year :
- 2012
- Publisher :
- Wiley, 2012.
-
Abstract
- In this work we report on the optical investigation of Zn doped GaN films fabricated by metal organic chemical vapor deposition. The samples show bright emission in the blue spectral range around 2.9 eV when Si codoping is provided. This emission is suggested to be used for single-photon emission, thus the density of the Zn-Si pairs was drastically reduced leading to a decrease of the blue luminescence. For electrically excited single-photon sources these Zn-Si pairs have to be incorporated into LEDs, therefore we fabricated GaN-based nano-LEDs which show electroluminescence at 430 nm (© 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
- Subjects :
- Range (particle radiation)
Materials science
business.industry
Chemical vapor deposition
Electroluminescence
Condensed Matter Physics
law.invention
Metal
law
Excited state
visual_art
visual_art.visual_art_medium
Optoelectronics
Metalorganic vapour phase epitaxy
business
Luminescence
Light-emitting diode
Subjects
Details
- ISSN :
- 16101642 and 18626351
- Volume :
- 9
- Database :
- OpenAIRE
- Journal :
- physica status solidi c
- Accession number :
- edsair.doi...........b0a047e2ad243555081077e5d4a3423e