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Zn doped GaN for single‐photon emission

Authors :
Arne Behrends
W. Schmunk
Johannes Ledig
Helmut Hofer
Andreas Waag
Ana Maria Racu
Andrey Bakin
Stefan Kück
M. Al-Suleiman
Silke Peters
Source :
physica status solidi c. 9:1024-1027
Publication Year :
2012
Publisher :
Wiley, 2012.

Abstract

In this work we report on the optical investigation of Zn doped GaN films fabricated by metal organic chemical vapor deposition. The samples show bright emission in the blue spectral range around 2.9 eV when Si codoping is provided. This emission is suggested to be used for single-photon emission, thus the density of the Zn-Si pairs was drastically reduced leading to a decrease of the blue luminescence. For electrically excited single-photon sources these Zn-Si pairs have to be incorporated into LEDs, therefore we fabricated GaN-based nano-LEDs which show electroluminescence at 430 nm (© 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)

Details

ISSN :
16101642 and 18626351
Volume :
9
Database :
OpenAIRE
Journal :
physica status solidi c
Accession number :
edsair.doi...........b0a047e2ad243555081077e5d4a3423e