Network analysis of semiconducting Zn 1-x Cd x S based photosensitive device using impedance spectroscopy and current-voltage measurement

ZnCdS is an intermediate ternary alloy type semiconducting material which has huge tunable structural, optical and electrical properties. Here, we have synthesized Zn 1-x Cd x S compound and characterized its structural, optical and charge transport properties. It is seen that the particle size is greatly influenced by the amount of alloy concentration of cadmium. The performance of semiconductor device such as Schottky diode depends mainly on the charge transportation through the metal-semiconductor junction. So, we have fabricated Al/Zn 1-x Cd x S/ITO device and investigated the bias dependent impedance properties through equivalent circuit network analysis to study the electron lifetime and interfacial region resistance. The result of network analysis indicates that the charge transportation through Al- Zn 0.6 Cd 0.4 S is better than the other fabricated devices. For further explanation, we have studied the capacitance-voltage (C–V) characteristic under dark and current-voltage (I–V) characteristic under dark and light. We have investigated barrier height, depletion layer width and employed SCLC (space charge limited current) theory in I–V characteristics to determine mobility, transit time and diffusion length. The mobility and diffusion length for Zn 0.6 Cd 0.4 S fabricated device are derived as 23.01 m 2 V −1 s −1 and 4.4 μm respectively while both the values are less for the other devices. These values are enhanced upon illumination for all the devices but superiority comes from the Al/Zn 0.6 Cd 0.4 S/ITO device and it leads us to measure the photosensitivity, responsivity, specific detectivity. As expected, the photosensing parameters are enhanced for the Zn 0.6 Cd 0.4 S fabricated device. So, this literature not only explores the metal semiconductor charge transportation using impedance spectroscopy (IS) network analysis and SCLC theory but also explain it from the structural point of view.