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Dislocations of ZnO single crystals examined by X-ray topography and photoluminescence
- Source :
- Journal of Materials Science: Materials in Electronics. 19:199-201
- Publication Year :
- 2007
- Publisher :
- Springer Science and Business Media LLC, 2007.
-
Abstract
- Dislocations generated by indentation and subsequent annealing at elevated temperatures up to 800 °C in high quality (0001) wafers of ZnO single crystals were investigated by transmission X-ray topography and photoluminescence. Damages induced by indentation in ZnO wafers were guessed to lead to dislocated regions from X-ray topographic images. PL intensities of 3.36 eV near-band edge peak and 2.4 eV deep emission band in ZnO decreased drastically, with increasing in annealing temperature up to 800 °C, irrespective of dislocated or non-dislocated regions. The development of a new emission band 2.8–3.0 eV was found in non-damaged ZnO through annealing at 700 and 800 °C, which suggests that dislocations suppress the development of the new peak.
- Subjects :
- Materials science
Photoluminescence
Annealing (metallurgy)
business.industry
X-ray
Mineralogy
Condensed Matter Physics
Atomic and Molecular Physics, and Optics
Electronic, Optical and Magnetic Materials
Emission band
Indentation
Optoelectronics
Wafer
Electrical and Electronic Engineering
Dislocation
business
Subjects
Details
- ISSN :
- 1573482X and 09574522
- Volume :
- 19
- Database :
- OpenAIRE
- Journal :
- Journal of Materials Science: Materials in Electronics
- Accession number :
- edsair.doi...........b010c6b21c0dbd7897b83a46067024ee