Thermally curable organic/inorganic hybrid polymers as gate dielectrics for organic thin-film transistors

New low-temperature curable organic/inorganic hybrid polymers were designed and synthesized as gate dielectrics for organic thin-film transistors (OTFTs). Allyl alcohols were introduced to polyhedral oligomeric silsesquioxane (POSS) via hydrosilyation to produce an alcohol-functionalized POSS derivative (POSS-OH). POSS-OH was then reacted with hexamethoxymethylmelamine at carrying molar ratios at 80 °C in the presence of a catalytic amount of p-toluenesulfonic acid to give highly cross-linked network polymers (POSS-MM). The prepared thin films were smooth and hard after the thermal cross-linking reaction and had very low leakage currents (