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Surface Electrons in Inverted Layers of p-HgCdTe
- Source :
- MRS Proceedings. 161
- Publication Year :
- 1989
- Publisher :
- Springer Science and Business Media LLC, 1989.
-
Abstract
- Anodic oxide passivation of p-type HgCdTe generates an inversion layer. Extremely high Hall mobility data for electrons in this layer indicated the presence of a two-dimensional electron gas. This is verified by use of the Shubnikov-de Haas effect from 1.45-4.15K. Data is extracted utilizing a numerical second derivative of DC measurement. Three sub-bands are detected. Their relative occupancies are in excellent agreement with theory and with experimental results obtained on anodic oxide as accumulation layers of n-type HgCdTe. The effective mass derived is comparable to expected.
Details
- ISSN :
- 19464274 and 02729172
- Volume :
- 161
- Database :
- OpenAIRE
- Journal :
- MRS Proceedings
- Accession number :
- edsair.doi...........afdabe8bf688ae4eabe14fd1aff4e02c