GENERATION RECOMBINATION NOISE IN p-Si AT 77 K

Noise and conductivity measurements in p-Si at 77K, up to 2.5kV/cm electric field strength, shows that three noise sources are significant: diffusion, G. R.,and 1/f noise. The diffusion coefficient versus electric field is given. The 1/f noise is important up to 10 GHz. The G.R. noise cannot be explained assuming two energy levels (impurity level and the valence band).