Orientation control and electrical properties of PZT/LNO capacitor through chemical solution deposition

This paper describes the deposition of PZT/lanthanum nickel oxide (LNO) electrode thin-film capacitor on a Si(1 0 0) substrate with a chemical solution deposition (CSD). Highly (1 0 0)-oriented LNO film with a perovskite structure was deposited by annealing at 700 °C from a precursor solution of La(NO 3 ) 3 and Ni(CH 3 COO) 2 . In addition, highly (1 0 0)&(0 0 1)-oriented PZT/LNO capacitor was deposited on LNO/Si substrate by annealing at 600 °C, showing P r = 18 μC/cm 2 and E c = 36 kV/cm. Furthermore, the resultant PZT/LNO thin-film capacitor exhibited no fatigue up to 10 8 switching cycles.