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Planer Diamond P-channel MOSFETs with Breakdown Voltage VB > 1.8kV and High Drain Current Density by 2DHG

Authors :
Daisuke Matsumura
Hiroshi Kawarada
Takuya Kudo
Yuya Kitabayashi
Atsushi Hiraiwa
Masanobu Shibata
Mohd Syamsul
Source :
Extended Abstracts of the 2016 International Conference on Solid State Devices and Materials.
Publication Year :
2016
Publisher :
The Japan Society of Applied Physics, 2016.

Subjects

Subjects :
P channel
Materials science
business.industry
engineering
Diamond
Optoelectronics
Breakdown voltage
Drain-induced barrier lowering
engineering.material
Drain current
business

Details

Database :
OpenAIRE
Journal :
Extended Abstracts of the 2016 International Conference on Solid State Devices and Materials
Accession number :
edsair.doi...........aeaf6fde48978dc745a2b27f67e96655
Full Text :
https://doi.org/10.7567/ssdm.2016.n-5-01
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