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Field emission from gated silicon field emitter array induced by sub-nanosecond laser pulses
- Source :
- 2016 29th International Vacuum Nanoelectronics Conference (IVNC).
- Publication Year :
- 2016
- Publisher :
- IEEE, 2016.
-
Abstract
- Volcano-structured p-type silicon field emitter arrays have been fabricated by etch-back technique and investigated the photoresponse characteristics of electron emission excited by laser pulses. We have observed the current pulses from the device with the same response of the laser pulse.
- Subjects :
- 010302 applied physics
Materials science
Silicon
Physics::Instrumentation and Detectors
business.industry
Hybrid silicon laser
Field emitter array
Physics::Optics
chemistry.chemical_element
02 engineering and technology
Electron
021001 nanoscience & nanotechnology
Laser
01 natural sciences
Computer Science::Other
law.invention
Field electron emission
chemistry
law
Excited state
0103 physical sciences
Optoelectronics
0210 nano-technology
business
Common emitter
Subjects
Details
- Database :
- OpenAIRE
- Journal :
- 2016 29th International Vacuum Nanoelectronics Conference (IVNC)
- Accession number :
- edsair.doi...........ae7c3ac0c243568e3cc71535680441c7