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Fabrication of widegap-emitter Schottky-collector transistor using GaInAs/InP

Authors :
N. Emeis
H. Beneking
Source :
Electronics Letters. 21:85
Publication Year :
1985
Publisher :
Institution of Engineering and Technology (IET), 1985.

Abstract

A widegap-emitter transistor with a Schottky collector has been fabricated using n-InP as the emitter, p-GaInAs as the base layer and Ni as the Schottky metallisation. The fabricated transistors show a current gain better than 5 in the common-emitter configuration.

Subjects

Subjects :
Materials science
business.industry
Heterostructure-emitter bipolar transistor
Schottky barrier
Schottky effect
Bipolar junction transistor
Transistor
Schottky diode
law.invention
Gallium arsenide
chemistry.chemical_compound
chemistry
law
Electronic engineering
Optoelectronics
Electrical and Electronic Engineering
business
Common emitter

Details

ISSN :
00135194
Volume :
21
Database :
OpenAIRE
Journal :
Electronics Letters
Accession number :
edsair.doi...........adf7a836b73526bbb56db4228992a7b0
Full Text :
https://doi.org/10.1049/el:19850058
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