Cavity-Enhanced Electroluminescence from GeSn p-i-n Diode on Silicon-on-Insulator Substrate

Authors :: Guo-En Chang
Bo-Jun Huang
Source :: 2018 IEEE Photonics Society Summer Topical Meeting Series (SUM).
Publication Year :: 2018
Publisher :: IEEE, 2018.
Abstract: We report cavity-enhanced direct band electroluminescence from GeSn p-i-n diodes on silicon-on-insulator substrates. A Fabry-Perot cavity was created between the buried oxide layer and the deposited oxide layer to enhance electroluminescence from the GeSn active layer.

Subjects :: Materials science
business.industry
Oxide
Silicon on insulator
P i n diode
02 engineering and technology
Substrate (electronics)
Electroluminescence
Active layer
chemistry.chemical_compound
020210 optoelectronics & photonics
chemistry
0202 electrical engineering, electronic engineering, information engineering
Optoelectronics
business
Layer (electronics)
Diode

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