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Photonic Ge-Sb-Te phase change metamaterials and their applications
- Source :
- Progress in Quantum Electronics. 74:100299
- Publication Year :
- 2020
- Publisher :
- Elsevier BV, 2020.
-
Abstract
- The ultrafast, reversible, nonvolatile and multistimuli responsive phase change of Ge-Sb-Te (GST) alloy makes it an interesting “smart” material. The optical features of GST undergo significant variation when its state changes between amorphous and crystalline, meaning that they are useful for tuning photonic components. A GST phase change material (PCM) can be efficiently triggered by stimuli such as short optical or electrical pulses, providing versatility in high-performance photonic applications and excellent capability to control light. In this review, we study the fundamentals of GST-tuned photonics and systematically summarise the progress in this area. We then introduce current developments in both GST-metal hybrid metamaterials and GST-based dielectric metamaterials, and investigate the strategy of designing reversibly switchable GST-based photonic devices and their advantages. These devices may have a vast array of potential applications in optical memories, switches, data storage, cloaking, photodetectors, modulators, antennas etc. Finally, the prospect of implementing GST PCM in emerging fields within photonics is considered.
- Subjects :
- Materials science
Chalcogenide
business.industry
Physics::Optics
Cloaking
Photodetector
Metamaterial
Statistical and Nonlinear Physics
02 engineering and technology
Dielectric
021001 nanoscience & nanotechnology
01 natural sciences
Atomic and Molecular Physics, and Optics
Electronic, Optical and Magnetic Materials
010309 optics
chemistry.chemical_compound
chemistry
0103 physical sciences
Computer data storage
Optoelectronics
Electrical and Electronic Engineering
Photonics
0210 nano-technology
business
Ultrashort pulse
Subjects
Details
- ISSN :
- 00796727
- Volume :
- 74
- Database :
- OpenAIRE
- Journal :
- Progress in Quantum Electronics
- Accession number :
- edsair.doi...........adc51243c4ab705cd783cf26ae30b211
- Full Text :
- https://doi.org/10.1016/j.pquantelec.2020.100299