Ultra Low-Level Ion Implantation Damage Detected by p-n Junctions Biased above Breakdown

Authors :: Emanuele Rimini
Sergio Cova
D. Sanfillippo
C. Di Franco
E. Sciacca
Massimo Ghioni
Franco Zappa
Davide Patti
Salvatore Lombardo
Source :: Solid State Phenomena. :431-440
Publication Year :: 2001
Publisher :: Trans Tech Publications, Ltd., 2001.

Subjects :: Materials science
Ion implantation
business.industry
Analytical chemistry
Optoelectronics
General Materials Science
Condensed Matter Physics
business
Atomic and Molecular Physics, and Optics
Avalanche breakdown

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