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Graphene-Based Etch Resist for Semiconductor Device Fabrication

Authors :
Seongjun Park
Hyangsook Lee
Hyeon-Jin Shin
Dongwook Lee
Keun Wook Shin
Seong-Jun Jeong
Hyun-Mi Kim
Ki-Bum Kim
Jae Gwan Chung
Sangwon Kim
Yeonchoo Cho
Minsu Seol
Source :
ACS Applied Nano Materials. 3:4635-4641
Publication Year :
2020
Publisher :
American Chemical Society (ACS), 2020.

Abstract

As the feature size of semiconductor devices decreases, the resist layer with high etch resistance is required to achieve fine pattern transfer during lithography. Conventional resists (e.g., amorp...

Details

ISSN :
25740970
Volume :
3
Database :
OpenAIRE
Journal :
ACS Applied Nano Materials
Accession number :
edsair.doi...........adaea2aa51e8166b711257d0f39457f6
Full Text :
https://doi.org/10.1021/acsanm.0c00658