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Graphene-Based Etch Resist for Semiconductor Device Fabrication
- Source :
- ACS Applied Nano Materials. 3:4635-4641
- Publication Year :
- 2020
- Publisher :
- American Chemical Society (ACS), 2020.
-
Abstract
- As the feature size of semiconductor devices decreases, the resist layer with high etch resistance is required to achieve fine pattern transfer during lithography. Conventional resists (e.g., amorp...
Details
- ISSN :
- 25740970
- Volume :
- 3
- Database :
- OpenAIRE
- Journal :
- ACS Applied Nano Materials
- Accession number :
- edsair.doi...........adaea2aa51e8166b711257d0f39457f6
- Full Text :
- https://doi.org/10.1021/acsanm.0c00658