A Study of Ag Paste Contacts on Various TCO Layers for Cu(In,Ga)Se2 Thin Film Modules

38th European Photovoltaic Solar Energy Conference and Exhibition; 467-470
The power conversion efficiencies (PCE) of Cu(In,Ga)Se2 (CIGS) cells on lab-scale are approaching c-Si cells. The module efficiencies, on the other hand, are considerably lower.[1], [2] Large-area modules show reduced fill factors and power conversion efficiencies. This so-called cell to module efficiency gap exists for all PV technologies. However, the difference in efficiency for CIGS cells modules is considerably higher than for the more mature Si-technology. This efficiency gap is mainly ascribed to the laterally spread electric defects due to non-uniformities in the materials' properties and the longer current paths over the larger area.[3]