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High-Speed Nonpolar InGaN/GaN Superluminescent Diode With 2.5 GHz Modulation Bandwidth
- Source :
- IEEE Photonics Technology Letters. 32:383-386
- Publication Year :
- 2020
- Publisher :
- Institute of Electrical and Electronics Engineers (IEEE), 2020.
-
Abstract
- We demonstrate a superluminescent diode fabricated on a nonpolar ${m}$ -plane GaN substrate by employing a linearly tapered waveguide design. A high electrical −3dB modulation bandwidth ( $f_{\mathbf {3dB}}$ ) of 2.5 GHz at a current density of 30 kA/cm2 is achieved. The high modulation bandwidth is attributed to the shorter carrier recombination lifetime, the linear gain curve in the nonpolar ${m}$ -plane quantum wells, and the ability to operate at high current densities while effectively suppressing lasing. We derive a general expression for the −3dB bandwidth as a function of current density for SLDs using a similar approach to that for laser diodes. The −3dB bandwidth of a nonpolar superluminescent diode increases exponentially with current density. The experimental results are consistent with the derived expression for $f_{\mathbf {3dB}}$ vs . current density.
- Subjects :
- Materials science
business.industry
Physics::Optics
Gallium nitride
Superluminescent diode
Waveguide (optics)
Atomic and Molecular Physics, and Optics
Electronic, Optical and Magnetic Materials
chemistry.chemical_compound
chemistry
Optoelectronics
Spontaneous emission
Electrical and Electronic Engineering
business
Lasing threshold
Current density
Quantum well
Diode
Subjects
Details
- ISSN :
- 19410174 and 10411135
- Volume :
- 32
- Database :
- OpenAIRE
- Journal :
- IEEE Photonics Technology Letters
- Accession number :
- edsair.doi...........acedc0244550608d3677e9e0aacd8c77