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Advanced amorphous dielectrics for embedded capacitors

Authors :
R. M. Fleming
C.Y. Sung
Lynn Schneemeyer
D. V. Lang
Philip W. Diodato
Glenn B. Alers
R. Liu
Jane P. Chang
L.A. Stirling
Y. H. Wong
R. B. van Dover
Source :
International Electron Devices Meeting 1999. Technical Digest (Cat. No.99CH36318).
Publication Year :
2003
Publisher :
IEEE, 2003.

Abstract

New classes of high dielectric constant materials based on binary and ternary amorphous metal oxides will be discussed. These films are compatible with low temperature processing within the metal layers of a circuit and can therefore be used with conventional metal electrodes like TiN. Different classes of mixed metal oxides will be discussed that are based on alloys of tantalum oxide and titanium oxide.

Details

Database :
OpenAIRE
Journal :
International Electron Devices Meeting 1999. Technical Digest (Cat. No.99CH36318)
Accession number :
edsair.doi...........ac8a9193b2edd4231c78652b314936a5
Full Text :
https://doi.org/10.1109/iedm.1999.824270