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Advanced amorphous dielectrics for embedded capacitors
- Source :
- International Electron Devices Meeting 1999. Technical Digest (Cat. No.99CH36318).
- Publication Year :
- 2003
- Publisher :
- IEEE, 2003.
-
Abstract
- New classes of high dielectric constant materials based on binary and ternary amorphous metal oxides will be discussed. These films are compatible with low temperature processing within the metal layers of a circuit and can therefore be used with conventional metal electrodes like TiN. Different classes of mixed metal oxides will be discussed that are based on alloys of tantalum oxide and titanium oxide.
Details
- Database :
- OpenAIRE
- Journal :
- International Electron Devices Meeting 1999. Technical Digest (Cat. No.99CH36318)
- Accession number :
- edsair.doi...........ac8a9193b2edd4231c78652b314936a5
- Full Text :
- https://doi.org/10.1109/iedm.1999.824270