Ion implant monitoring with thermal wave technology

Thermal wave technology has led to a new means of monitoring the dose and dose uniformity of ions implanted into wafers of silicon and gallium arsenide. New monitoring characteristics made available with this technique include nondestructive real-time dose measurements on product wafers as well as test wafers without annealing or other processing, dose measurements down to the 1E10 ions/cm 2 decade and up to 1E16 ions/cm 2 , dose measurements down to 5 keV ion energy and measurement through oxide or nitride overlayers. Furthermore, postanneal measurements of dose are also available in the high-dose range of 5E14-1E16 ions/cm 2 . In this paper we present examples to illustrate these capabilities.