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The Properties of n-ZnO/p-SiC Heterojunctions and their Potential Applications for Devices

Authors :
Ümit Özgür
Cole W. Litton
D. Johnstone
Kaigui Zhu
V. Avrutin
Ya. I. Alivov
S. Akarca-Biyikli
Qian Fan
Hadis Morkoç
Source :
Materials Science Forum. :1571-1574
Publication Year :
2006
Publisher :
Trans Tech Publications, Ltd., 2006.

Abstract

Heteroepitaxial n-ZnO films have been grown on commercial p-type 6H-SiC substrates by plasma-assisted molecular-beam epitaxy, and n-ZnO/p-SiC heterojunction mesa structures have been fabricated and their photoresponse properties have been studied. Current-voltage characteristics of the structures had a very good rectifying diode-like behavior with a leakage current less than 2 x 10-4 A/cm2 at -10 V, a breakdown voltage greater than 20 V, a forward turn on voltage of ∼5 V, and a forward current of ∼2 A/cm2 at 8 V. Photosensitivity of the diodes, when illuminated from ZnO side, was studied at room temperature and photoresponsivity of as high as 0.045 A/W at -7.5 V reverse bias was observed for photon energies higher than 3.0 eV.

Details

ISSN :
16629752
Database :
OpenAIRE
Journal :
Materials Science Forum
Accession number :
edsair.doi...........ac6ea73583dcc0d6582d69f92de67e6a