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Full-Metal-Gate Integration of Dual-Metal-Gate HfSiON CMOS Transistors by Using Oxidation-Free Dummy-Mask Process

Authors :
Yasuo Nara
Fumio Ootsuka
M. Kitajima
Yasuyuki Tamura
Y. Akasaka
Kunio Nakamura
M. Ohtsuka
Seiji Inumiya
H. Nakata
Takanobu Watanabe
Source :
Extended Abstracts of the 2006 International Conference on Solid State Devices and Materials.
Publication Year :
2006
Publisher :
The Japan Society of Applied Physics, 2006.

Subjects

Subjects :
Materials science
CMOS
business.industry
law
Transistor
Process (computing)
Optoelectronics
business
Metal gate
Dual (category theory)
law.invention

Details

Database :
OpenAIRE
Journal :
Extended Abstracts of the 2006 International Conference on Solid State Devices and Materials
Accession number :
edsair.doi...........ac1fb3474cc108c327e9e7d43ceed7b1
Full Text :
https://doi.org/10.7567/ssdm.2006.j-8-5
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