New Development and characterization of Oxide-based Selector for Cross-Point 25-nm ReRAM

Authors :: S.G. Kim
J.C. Lee
T.J. Ha
J.H. Lee
J.Y. Lee
Y.T. Park
K.W. Kim
W.K. Ju
Y.S. Ko
H.M. Hwang
B.M. Lee
J.Y. Moon
W.Y. Park
B.G. Gyun
B.-K. Lee
J.K. Kim
Source :: Extended Abstracts of the 2018 International Conference on Solid State Devices and Materials.
Publication Year :: 2018
Publisher :: The Japan Society of Applied Physics, 2018.

Subjects :: Materials science
business.industry
Oxide
02 engineering and technology
010402 general chemistry
021001 nanoscience & nanotechnology
01 natural sciences
0104 chemical sciences
Characterization (materials science)
Resistive random-access memory
chemistry.chemical_compound
chemistry
Optoelectronics
Cross point
0210 nano-technology
business

Database :: OpenAIRE
Journal :: Extended Abstracts of the 2018 International Conference on Solid State Devices and Materials
Accession number :: edsair.doi...........abdc998f5713ea85e9597ae234b1ea22

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