Back to Search Start Over

Doping-Less 1T-DRAM with Schottky Barrier Contact for Low Power Application

Authors :
J.T. Lin
W.T. Sun
Abhinav Kranti
Y.J. Chen
H.H. Lin
Source :
Extended Abstracts of the 2018 International Conference on Solid State Devices and Materials.
Publication Year :
2018
Publisher :
The Japan Society of Applied Physics, 2018.

Subjects

Subjects :
Materials science
business.industry
Schottky barrier
Doping
Optoelectronics
Power application
business
Dram

Details

Database :
OpenAIRE
Journal :
Extended Abstracts of the 2018 International Conference on Solid State Devices and Materials
Accession number :
edsair.doi...........abcdb060b34969734885e37f8121d8af

Tools

Authors Abstract Subjects Details