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Unveiling switching mechanisms in RRAMs
- Source :
- 2010 IEEE International Conference of Electron Devices and Solid-State Circuits (EDSSC).
- Publication Year :
- 2010
- Publisher :
- IEEE, 2010.
-
Abstract
- Resistive random access memories (RRAMs) are deemed as one type of a few promising alternative non-volatile memories (NVMs) to the mainstreamNAND/NOR flash. The switching mechanisms for RRAMs, however, remain murky and a quantitative or semi-empiricalmodel is urgently needed. This talk reviews the status of modeling switching mechanisms in both TMO (transition metal oxide) RRAMs and carbon-based RRAMs, and describes recent research progress at authors' group in Tsinghua University.
- Subjects :
- Computer science
Electronic engineering
Subjects
Details
- Database :
- OpenAIRE
- Journal :
- 2010 IEEE International Conference of Electron Devices and Solid-State Circuits (EDSSC)
- Accession number :
- edsair.doi...........abad0ca1b9629777670dfdd1fe31fafc
- Full Text :
- https://doi.org/10.1109/edssc.2010.5713731