Fabrication of wide-band electro-absorption waveguide modulator arrays using quantum well-intermixing process

The present paper reports on the demonstration of wide optical bandwidth electro-absorption waveguide modulator arrays fabricated on a single InGaAs/InGaAsP wafer chip using a gray-mask-based quantum well intermixing. Both micro-Raman and photoluminescence measurements have shown that the quality of the material concerning is maintained after the ion implantation-induced process. Multiple energy bandgap sections for absorbing at different wavelengths with a large modulation depth have been achieved in modulator arrays, with around 60 nm as the modulating bandwidth. An intensity modulation depth of about −16 dB has been obtained at −5 V bias for these modulator arrays.