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Symmetric–asymmetric transformation of an image on GaAs(001)-c(4 × 4)α surface using scanning tunneling microscopy
- Source :
- Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 30:061403
- Publication Year :
- 2012
- Publisher :
- American Vacuum Society, 2012.
-
Abstract
- Many studies have observed a clean GaAs(001)-c(4 × 4) surface using scanning tunneling microscopy. These studies have reported the observation of an asymmetric pattern formed from three asymmetric Ga–As dimers. In this study, however, a symmetric pattern was also observed depending on the applied bias voltage. These symmetric (asymmetric) patterns were observed at positive (negative) sample biases.
- Subjects :
- Surface (mathematics)
Materials science
Scanning tunneling spectroscopy
Biasing
Surfaces and Interfaces
Condensed Matter Physics
C-4
Molecular physics
Surfaces, Coatings and Films
law.invention
Gallium arsenide
Crystallography
chemistry.chemical_compound
Transformation (function)
chemistry
law
Scanning tunneling microscope
Surface reconstruction
Subjects
Details
- ISSN :
- 15208559 and 07342101
- Volume :
- 30
- Database :
- OpenAIRE
- Journal :
- Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films
- Accession number :
- edsair.doi...........ab138b533b127006291ef1d1f1d5564f
- Full Text :
- https://doi.org/10.1116/1.4754804