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Symmetric–asymmetric transformation of an image on GaAs(001)-c(4 × 4)α surface using scanning tunneling microscopy

Authors :
Kazuma Yagyu
Junji Yoshino
Shigeru Kaku
Source :
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 30:061403
Publication Year :
2012
Publisher :
American Vacuum Society, 2012.

Abstract

Many studies have observed a clean GaAs(001)-c(4 × 4) surface using scanning tunneling microscopy. These studies have reported the observation of an asymmetric pattern formed from three asymmetric Ga–As dimers. In this study, however, a symmetric pattern was also observed depending on the applied bias voltage. These symmetric (asymmetric) patterns were observed at positive (negative) sample biases.

Details

ISSN :
15208559 and 07342101
Volume :
30
Database :
OpenAIRE
Journal :
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films
Accession number :
edsair.doi...........ab138b533b127006291ef1d1f1d5564f
Full Text :
https://doi.org/10.1116/1.4754804