Calculation of the Auger lifetime in degenerate n-type (Hg,Cd)Te

The lifetime, TAl due to the,two-band, Auger 1 recombination mechanism is calculated for degenerate n-type (Hg,Cd)Te as a function of equilibrium carrier concentration, no under low modulation. For no sufficiently large so that the Fermi energy, EF is at least a kBT above the conduction band minimum, τAl ∝ 1/no/γ where γ < 1. For x = 0.2 and 50K ≤ T ≤ 200K, 0.7 ≤ γ ≤ 0.8. For EF(no) at least 3 kBT below the conduction band minimum, τAl ∝ 1/no/2.It is also found that in the degenerate region, τAl decreases with T for fixed no.