Lattice Deformation in AlxGa1-xAs Epitaxial Layers Caused by Implantation with High Doses of 1 Mev Si Ions

Authors :: Krzysztof Wieteska
W. Graeff
Andrzej Turos
Wojciech Wierzchowski
R. Grötzschel
Source :: Acta Physica Polonica A. 96:289-293
Publication Year :: 1999
Publisher :: Institute of Physics, Polish Academy of Sciences, 1999.

Subjects :: Lattice deformation
X-ray absorption spectroscopy
Materials science
Condensed matter physics
High doses
General Physics and Astronomy
Atomic physics
Epitaxy
Ion

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