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A novel gate-suppression technique for ESD protection

Authors :
Fei Ma
Jianfeng Zheng
Mingliang Li
Meng Miao
Jian Wu
Shurong Dong
Yan Han
Source :
Microelectronics Reliability. 52:1598-1601
Publication Year :
2012
Publisher :
Elsevier BV, 2012.

Abstract

A novel gate-suppression technique derived from source-pumping technique is proposed for Electrostatic Discharge (ESD) protection application. By employing the complementary SCR structure, an improved source-pumping and the gate-suppression scheme are able to extend ESD window and endure a high level of ESD impact without additional layout area cost. The fast rise time TLP test revealed the gate-suppression technique provide more effective protection than the source-pumping technique.

Details

ISSN :
00262714
Volume :
52
Database :
OpenAIRE
Journal :
Microelectronics Reliability
Accession number :
edsair.doi...........aa9a544664358c05bd89aac6b8287f7b