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Synchrotron radiation based cross-sectional scanning photoelectron microscopy and spectroscopy of n-ZnO:Al/p-GaN:Mg heterojunction

Authors :
Sheng Po Chang
Hung-Wei Shiu
Shoou-Jinn Chang
Chia Hao Chen
Tse Pu Chen
Kai Hsuan Lee
Lo-Yueh Chang
Ping Chuan Chang
Source :
Applied Physics Letters. 102:072104
Publication Year :
2013
Publisher :
AIP Publishing, 2013.

Abstract

Al-doped ZnO (AZO) deposited by radio frequency co-sputtering is formed on epitaxial Mg-doped GaN template at room temperature to achieve n-AZO/p-GaN heterojunction. Alignment of AZO and GaN bands is investigated using synchrotron radiation based cross-sectional scanning photoelectron microscopy and spectroscopy on the nonpolar side-facet of a vertically c-axis aligned heterostructure. It shows type-II band configuration with valence band offset of 1.63 ± 0.1 eV and conduction band offset of 1.61 ± 0.1 eV, respectively. Rectification behavior is clearly observed, with a ratio of forward-to-reverse current up to six orders of magnitude when the bias is applied across the p-n junction.

Details

ISSN :
10773118 and 00036951
Volume :
102
Database :
OpenAIRE
Journal :
Applied Physics Letters
Accession number :
edsair.doi...........aa885b0ac8e2683834136603ecece356