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In situ thickness monitoring and adjusting during MBE growth for VCSEL
- Source :
- Conference Digest. 15th IEEE International Semiconductor Laser Conference.
- Publication Year :
- 2002
- Publisher :
- IEEE, 2002.
-
Abstract
- We study the apparent substrate temperature oscillation during the whole growth of MBE-VCSEL. The accurate growth rate and mode wavelength are measured during the growth. The InGaAs-GaAs VCSEL with threshold current less than 200 /spl mu/A was achieved.
Details
- Database :
- OpenAIRE
- Journal :
- Conference Digest. 15th IEEE International Semiconductor Laser Conference
- Accession number :
- edsair.doi...........aa848129964524044e0034fb0766b587
- Full Text :
- https://doi.org/10.1109/islc.1996.553759