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Mechanical strain effect of n-channel polycrystalline silicon thin-film transistors

Authors :
C.-Y. Peng
Chih-Hsiung Huang
Chee-Wee Liu
Ying-Jay Yang
Fang Yuan
Source :
Applied Physics Letters. 89:103502
Publication Year :
2006
Publisher :
AIP Publishing, 2006.

Abstract

The current change of n-channel polycrystalline silicon thin-film transistors is analyzed experimentally and theoretically under different strain conditions. Under the uniaxial strain parallel to the channel, the +6.7% and +5.3% drain current enhancements are achieved in linear and saturation regions, respectively. There are −4.4% (linear) and −4.6% (saturation) drain current degradations when the uniaxial strain is applied perpendicular to the channel. The polycrystalline silicon is mainly composed of (111)-oriented grains, measured by electron diffraction pattern. Phonon-limited mobility is theoretically calculated. There is a qualitative agreement between experiments and theoretical analysis.

Details

ISSN :
10773118 and 00036951
Volume :
89
Database :
OpenAIRE
Journal :
Applied Physics Letters
Accession number :
edsair.doi...........aa7ba09220dda8cbc84400e48fda7514
Full Text :
https://doi.org/10.1063/1.2344855