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Mechanical strain effect of n-channel polycrystalline silicon thin-film transistors
- Source :
- Applied Physics Letters. 89:103502
- Publication Year :
- 2006
- Publisher :
- AIP Publishing, 2006.
-
Abstract
- The current change of n-channel polycrystalline silicon thin-film transistors is analyzed experimentally and theoretically under different strain conditions. Under the uniaxial strain parallel to the channel, the +6.7% and +5.3% drain current enhancements are achieved in linear and saturation regions, respectively. There are −4.4% (linear) and −4.6% (saturation) drain current degradations when the uniaxial strain is applied perpendicular to the channel. The polycrystalline silicon is mainly composed of (111)-oriented grains, measured by electron diffraction pattern. Phonon-limited mobility is theoretically calculated. There is a qualitative agreement between experiments and theoretical analysis.
- Subjects :
- Electron mobility
Materials science
Physics and Astronomy (miscellaneous)
Silicon
Nanocrystalline silicon
chemistry.chemical_element
Strained silicon
engineering.material
Polycrystalline silicon
chemistry
Electron diffraction
Thin-film transistor
engineering
Composite material
Saturation (magnetic)
Subjects
Details
- ISSN :
- 10773118 and 00036951
- Volume :
- 89
- Database :
- OpenAIRE
- Journal :
- Applied Physics Letters
- Accession number :
- edsair.doi...........aa7ba09220dda8cbc84400e48fda7514
- Full Text :
- https://doi.org/10.1063/1.2344855