A 150% enhancement of PMOSFET mobility using hybrid orientation

A high-performance PMOSFET based on silicon material of hybrid orientation is obtained. Hybrid orientation wafers, integrated by (100) and (110) crystal orientation, are fabricated using silicon-silicon bonding, chemical mechanical polishing, etching silicon and non-selective expitaxy. A PMOSFET with W/L = 50 μm/8 μm is also processed, and the measured results show that the drain-source current and peak mobility of the PMOSFET are enhanced by up to 50.7% and 150% at Vgs = −15 V and Vds = −0.5 V, respectively. The mobility values are higher than that reported in the literature.