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Excessive Oxygen Peroxide Model‐Based Analysis of Positive‐Bias‐Stress and Negative‐Bias‐Illumination‐Stress Instabilities in Self‐Aligned Top‐Gate Coplanar In–Ga–Zn–O Thin‐Film Transistors

Details

ISSN :
2199160X
Volume :
8
Database :
OpenAIRE
Journal :
Advanced Electronic Materials
Accession number :
edsair.doi...........aa53adc84c196b39b011273b56a23cfa
Full Text :
https://doi.org/10.1002/aelm.202101062