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Characterization of Intermetallic Compound Formation on In/Bi/Sn Solder Bumps Used in Pb-Alloy Josephson Chip Packaging
- Source :
- IEEE Transactions on Components, Hybrids, and Manufacturing Technology. 10:263-266
- Publication Year :
- 1987
- Publisher :
- Institute of Electrical and Electronics Engineers (IEEE), 1987.
-
Abstract
- An AuIn 2 intermetallic compound was discovered and its effect on bonding in Pb-alloy Josephson chip packaging was investigated. This was achieved by applying an In/Bi/Sn ternary alloy solder, which was characterized by X-ray and thermal analysis. Both bulk and vacuumdeposited In/Bi/Sn films were used, and in both cases the dominant compound was BiIn 2 . Indium, \gamma -SnIn, and \beta -InSn were also detected. Bi 3 In 5 appeared as the In content decreased. The sequentially deposited thick solder film had a simple structure, but the structure at the interface between solder and Pd/Au was very complicated. The dominant compounds at this interface were AuIn 2 and Bi 3 In 5 . Joining strength using In/Bi/Sn solder depended on the solder-bump fabrication process. The fracture interface was analyzed using electron probe microanalysis (EPMA) and Auger electron spectroscopy (AES). Fracture occurred at the interface between Pd and Au. It was found that AuIn 2 intermetallic compound formation reduced chip bonding strength. Low-temperature annealing of Pd/Au thin film before solder evaporation reduced AuIn 2 intermetallic compound formation.
- Subjects :
- Auger electron spectroscopy
Materials science
Metallurgy
Alloy
General Engineering
Intermetallic
chemistry.chemical_element
engineering.material
Industrial and Manufacturing Engineering
Electronic, Optical and Magnetic Materials
chemistry
Electron diffraction
Soldering
engineering
Electrical and Electronic Engineering
Thin film
Composite material
Indium
Flip chip
Subjects
Details
- ISSN :
- 01486411
- Volume :
- 10
- Database :
- OpenAIRE
- Journal :
- IEEE Transactions on Components, Hybrids, and Manufacturing Technology
- Accession number :
- edsair.doi...........aa43ecda2b2ab4144cd27adb5b2cdaa9
- Full Text :
- https://doi.org/10.1109/tchmt.1987.1134729