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Spatial localization of impurities in δ‐doped GaAs
- Source :
- Applied Physics Letters. 52:1508-1510
- Publication Year :
- 1988
- Publisher :
- AIP Publishing, 1988.
-
Abstract
- Capacitance‐voltage profiles on δ‐doped GaAs grown by molecular beam epitaxy reveal extremely narrow widths of ≲40 A at room temperature. Subband structure and capacitance‐voltage (C‐V) profiles of δ‐doped GaAs are calculated self‐consistently. Experimental C‐V profiles agree with self‐consistent results, only if we assume that Si impurities are localized on the length scale of the lattice constant in the host GaAs zinc‐blende lattice.
- Subjects :
- Length scale
Physics and Astronomy (miscellaneous)
Condensed matter physics
Chemistry
Doping
Crystal growth
Condensed Matter::Mesoscopic Systems and Quantum Hall Effect
Epitaxy
Condensed Matter::Materials Science
Lattice constant
Condensed Matter::Superconductivity
Thin film
Electronic band structure
Molecular beam epitaxy
Subjects
Details
- ISSN :
- 10773118 and 00036951
- Volume :
- 52
- Database :
- OpenAIRE
- Journal :
- Applied Physics Letters
- Accession number :
- edsair.doi...........aa3fc5f4b7042fe9434e88a5d98d50ca