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Monolithically integrated 4×4 InGaAsP/InP laser amplifier gate switch arrays

Authors :
M. Janson
Michael Rask
Lars Thylén
B. Lagerstrom
B. Stoltz
A.-C. Morner
L. Lundgren
M. Gustavsson
Source :
Electronics Letters. 28:2223
Publication Year :
1992
Publisher :
Institution of Engineering and Technology (IET), 1992.

Abstract

Monolithically integrated 4×4 semiconductor laser amplifier gate switch arrays comprising 24 integrated laser amplifiers have been fabricated and evaluated. Net positive optical gain between fibres, high extinction ratio, and low crosstalk are reported.

Subjects

Subjects :
Optical amplifier
Materials science
Extinction ratio
business.industry
Amplifier
Circuit design
Integrated circuit
Laser
Optical switch
law.invention
Gallium arsenide
chemistry.chemical_compound
Optics
chemistry
law
Optoelectronics
Electrical and Electronic Engineering
business

Details

ISSN :
00135194
Volume :
28
Database :
OpenAIRE
Journal :
Electronics Letters
Accession number :
edsair.doi...........aa0060f3c3cadc3afd3ab9cef0090b6f
Full Text :
https://doi.org/10.1049/el:19921428
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