InP HBT Small Signal Modeling based on Artificial Neural Network for Millimeter-wave Application

InP heterojunction bipolar transistor (HBT) small signal modeling technique based on artificial neural network(ANN) is proposed in this paper. Two ANN models with different outputs form are given and compared. In the frequency range of 2-110 GHz, good agreements between the measured and model-calculated data can be achieved to demonstrate that the ANN model outputs with complex numbers form is more accurate than amplitude-phase form.