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Variability Analysis of TiN Metal-Gate FinFETs
- Source :
- IEEE Electron Device Letters. 31:546-548
- Publication Year :
- 2010
- Publisher :
- Institute of Electrical and Electronics Engineers (IEEE), 2010.
-
Abstract
- Variability of TiN FinFET performance is comprehensively studied. It is found that the variation of the in the FinFET occurs and the standard deviations of the of nMOS and pMOS FinFETs are almost the same. From the analytical results, it is found that the variation of the TiN FinFET is due to the work function variation (WFV) of TiN metal gate. The WFV is also responsible for the on-current variation.
Details
- ISSN :
- 15580563 and 07413106
- Volume :
- 31
- Database :
- OpenAIRE
- Journal :
- IEEE Electron Device Letters
- Accession number :
- edsair.doi...........a9595ff63c81b0fd063edc5a87aa2e56
- Full Text :
- https://doi.org/10.1109/led.2010.2047091