Modeling negative and positive temperature dependence of the gate leakage current in GaN high‐electron mobility transistors

Subjects

Subjects :

General Computer Science
Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials

Details

ISSN :

22337326 and 12256463

Volume :

44

Database :

OpenAIRE

Journal :

ETRI Journal

Accession number :

edsair.doi...........a946eef68603fe9be27b26cebc11aaf8

Full Text :

https://doi.org/10.4218/etrij.2021-0070